gaas infrared emitting diode SE2460 description features miniature, hermetically sealed, pill style, metal can package 18? (nominal) beam angle wide operating temperature range (-55?c?to?+125?c) ideal for direct mounting to printed circuit boards 935 nm wavelength mechanically and spectrally matched to sd2420 photodiode, sd2440 phototransistor and sd2410 photodarlington the SE2460 is a gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. this package directly mounts in double sided pc boards. dim_002.ds4 infra--1.tif outline dimensions in inches (mm) 3 plc decimals 0.005(0.12) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 16
gaas infrared emitting diode SE2460 electrical characteristics units test conditions min parameter symbol typ max absolute maximum ratings (25?c free-air temperature unless otherwise noted) continuous forward current 75 ma power dissipation 125 mw [] operating temperature range -55?c to 125?c storage temperature range -65?c to 150?c soldering temperature (10 sec) 260?c notes 1. derate linearly from 25?c free-air temperature at the rate of 1.19 mw/?c,when soldered into a double sided printed circuit board. schematic
gaas infrared emitting diode SE2460 radiant intensity vs angular displacement gra_111.ds4 angular displacement - degrees r e l a t i v e i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 fig. 1 radiant intensity vs forward current gra_014.ds4 forward current - ma n o r m a l i z e d r a d i a n t i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 10.0 20.0 30.0 40.0 50.0 fig. 2 forward voltage vs forward current gra_203.ds4 forward current - ma f o r w a r d v o l t a g e - v 1.00 1.05 1.10 1.20 1.25 1.30 1.40 0 10 20 30 50 60 70 80 40 1.15 1.35 fig. 3 forward voltage vs temperature gra_200.ds4 temperature - c f o r w a r d v o l t a g e - v 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 -50 -25 0 25 50 75 100 125 i f = 20 ma fig. 4 spectral bandwidth gra_005.ds4 wavelength - nm r e l a t i v e i n t e n s i t y 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 fig. 5 coupling characteristics with sd2440 gra_015.ds4 lens-to-lens separation - inches n o r m a l i z e d l i g h t c u r r e n t 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 6 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 18
gaas infrared emitting diode SE2460 normalized power output vs temperature gra_131.ds4 n o r m a l i z e d p o w e r o u t p u t 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 t a - ambient temperature - (c) -50 -25 0 +25 +50 +75 +100 +125 i f = 50 ma i f = 20 ma fig. 7 all performance curves show typical values honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 19
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